<?xml version="1.0" encoding="UTF-8"?>
<!DOCTYPE article PUBLIC "-//NLM//DTD JATS (Z39.96) Journal Publishing DTD v1.3 20210610//EN" "JATS-journalpublishing1-3.dtd">
<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">ikbgu</journal-id><journal-title-group><journal-title xml:lang="ru">Известия Кабардино-Балкарского государственного университета</journal-title><trans-title-group xml:lang="en"><trans-title>Proceedings of the Kabardino-Balkarian State University</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2221-7789</issn><publisher><publisher-name>Kabardino-Balkarian State University named after Kh. M. Berbekov</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.31143/2221-7789-2024-1-26-29</article-id><article-id custom-type="edn" pub-id-type="custom">EDPTQH</article-id><article-id custom-type="elpub" pub-id-type="custom">ikbgu-72</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>Физика</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>Physics</subject></subj-group></article-categories><title-group><article-title>ВЛИЯНИЕ КОНЦЕНТРАЦИИ ФОСФОРА И ДАВЛЕНИЯ ПАРА ГАЗОВОЙ СРЕДЫ НА СТЕПЕНЬ ОПЛАВЛЕНИЯ ФОСФОРОСИЛИКАТНОГО СТЕКЛА</article-title><trans-title-group xml:lang="en"><trans-title>THE EFFECT OF PHOSPHORUS CONCENTRATION AND GAS MEDIUM VAPOR PRESSURE ON THE MELTING DEGREE OF PHOSPHOROSILICATE GLASS</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Черкесова</surname><given-names>Н. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Cherkesova</surname><given-names>N. V.</given-names></name></name-alternatives><email xlink:type="simple">natasha07_2002@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Мустафаев</surname><given-names>Г. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Mustafaev</surname><given-names>G. A.</given-names></name></name-alternatives><email xlink:type="simple">natasha07_2002@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Мустафаев</surname><given-names>А. Г.</given-names></name><name name-style="western" xml:lang="en"><surname>Mustafaev</surname><given-names>A. G.</given-names></name></name-alternatives><email xlink:type="simple">natasha07_2002@mail.ru</email><xref ref-type="aff" rid="aff-2"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Кабардино-Балкарский государственный университет им. Х.М. Бербекова</institution></aff><aff xml:lang="en"><institution>Kabardino-Balkarian State University named after Kh.M. Berbekov</institution></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>Дагестанский государственный университет народного хозяйства</institution></aff><aff xml:lang="en"><institution>Dagestan State University of National Economy</institution></aff></aff-alternatives><pub-date pub-type="collection"><year>2024</year></pub-date><pub-date pub-type="epub"><day>30</day><month>03</month><year>2024</year></pub-date><volume>14</volume><issue>1</issue><fpage>26</fpage><lpage>29</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Черкесова Н.В., Мустафаев Г.А., Мустафаев А.Г., 2024</copyright-statement><copyright-year>2024</copyright-year><copyright-holder xml:lang="ru">Черкесова Н.В., Мустафаев Г.А., Мустафаев А.Г.</copyright-holder><copyright-holder xml:lang="en">Cherkesova N.V., Mustafaev G.A., Mustafaev A.G.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://www.izvestiakbsu.ru/jour/article/view/72">https://www.izvestiakbsu.ru/jour/article/view/72</self-uri><abstract><p>Проведена оценка влияния концентрации фосфора, температуры и давления пара на степень оплавления фосфоросиликатного стекла. Показано, что скорость оплавления растет с повышением температуры и увеличением концентрации фосфора, а длительность и скорость оплавления зависят от газовой среды, в которой проводится оплавление. Показано, что эффективность оплавления уменьшается в ряду: пирогенный пар, влажный O2, сухой O2, сухой N2. Показано, что одним из путей решения проблем понижения температуры технологических процессов является проведение процесса оплавления при повышенном давлении газовой среды.</p></abstract><trans-abstract xml:lang="en"><p>The effect of phosphorus content, temperature, and vapor pressure on the melting temperature of phosphorosilicate glass was investigated. It is demonstrated that the melting rate increases with increasing temperature and phosphorus concentration, and that the length and speed of melting are affected by the gas medium in which the melting occurs. The reflow efficiency declines in the following order: pyrogenic steam, wet O2, dry O2, dry N2. It is demonstrated that one method for addressing the problem of lowering the temperature of technological processes is to conduct the melting process at elevated gas medium pressure.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>планаризация</kwd><kwd>межслойная изоляция</kwd><kwd>скорость оплавления</kwd><kwd>концентрации</kwd><kwd>адсорбция</kwd><kwd>поликремний</kwd><kwd>стекло</kwd><kwd>диффузия</kwd><kwd>нитрид кремния</kwd><kwd>давления газовой среды</kwd></kwd-group><kwd-group xml:lang="en"><kwd>planarization</kwd><kwd>interlayer insulation</kwd><kwd>melting rate</kwd><kwd>concentrations</kwd><kwd>adsorption</kwd><kwd>polysilicon</kwd><kwd>glass</kwd><kwd>diffusion</kwd><kwd>silicon nitride</kwd><kwd>gas medium pressure</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Мустафаев Г.А., Черкесова Н.В. Трехмерные интегральные схемы: учебное пособие. Нальчик: КБГУ, 2016. 89 с.</mixed-citation><mixed-citation xml:lang="en">Mustafaev G.A., Cherkesova N.V. Three-Dimensional Integrated Circuits: Textbook. Nalchik: KBGU, 2016. 89 p.</mixed-citation></citation-alternatives></ref><ref id="cit2"><label>2</label><citation-alternatives><mixed-citation xml:lang="ru">Красников Г.Я. Конструктивно-технологические особенности субмикронных МОП-транзис- торов. М.: Техносфера, 2011. 799 с.</mixed-citation><mixed-citation xml:lang="en">Krasnikov G.Ya. Design and Technological Features of Submicron MOS Transistors. M.: Tekhnosfera, 2011. 799 p.</mixed-citation></citation-alternatives></ref><ref id="cit3"><label>3</label><citation-alternatives><mixed-citation xml:lang="ru">Зятьков И.И., Кривошеева А.Н. Базовые процессы планарной технологии: электрон. учеб. по- собие. СПб.: «ЛЭТИ», 2018. 1 эл.-опт. диск (CD-ROM).</mixed-citation><mixed-citation xml:lang="en">Zyatkov I.I., Krivosheeva A.N. Basic Processes of Planar Technology: Electronic Textbook. manual. SPb.: «ETI», 2018. 1 el.-opt. disk (CD-ROM).</mixed-citation></citation-alternatives></ref><ref id="cit4"><label>4</label><citation-alternatives><mixed-citation xml:lang="ru">Громов Д.В., Краснюк А.А. Материаловедение для микро- и наноэлектроники: учебное посо- бие. М.: МИФИ, 2008. 156 с.</mixed-citation><mixed-citation xml:lang="en">Gromov D.V., Krasnyuk A.A. Materials Science for Micro- and Nano-Electronics: Textbook. M.: MIFI, 2008. 156 p.</mixed-citation></citation-alternatives></ref><ref id="cit5"><label>5</label><citation-alternatives><mixed-citation xml:lang="ru">Пирс К. Технология СБИС: в 2 кн. / пер. с англ. В.М. Звероловлева. М.: Мир, 1986. 404 с.</mixed-citation><mixed-citation xml:lang="en">Pierce K. VLSI Technology: in 2 books. / translated from English by V.M. Zverolovlev. Moscow: Mir, 1986. 404 p.</mixed-citation></citation-alternatives></ref><ref id="cit6"><label>6</label><citation-alternatives><mixed-citation xml:lang="ru">Могэб К. Технология СБИС: в 2 кн. / пер. с англ. В.Н. Лейкина. М.: Мир, 1986. 453 с.</mixed-citation><mixed-citation xml:lang="en">Mogheb K. VLSI Technology: in 2 books. / translated from English by V.N. Leykin. Moscow: Mir, 1986. 453 p.</mixed-citation></citation-alternatives></ref><ref id="cit7"><label>7</label><citation-alternatives><mixed-citation xml:lang="ru">Mustafaev G.A., Mustafaev A.G., Cherkesova. N.V. Thin Layers of Oxide Coating in Very-Large- Scale Integration // AER-Advances in Engineering Research. 2018. V. 177. Р. 377–379.</mixed-citation><mixed-citation xml:lang="en">Mustafaev G.A., Mustafaev A.G., Cherkesova. N.V. Thin Layers of Oxide Coating in Very-Large- Scale Integration // AER-Advances in Engineering Research. 2018. V. 177. Р. 377–379.</mixed-citation></citation-alternatives></ref></ref-list><fn-group><fn fn-type="conflict"><p>The authors declare that there are no conflicts of interest present.</p></fn></fn-group></back></article>
