REDUCING THE EFFECT OF INJECTION OF HOT CARRIERS BY ACCEPTOR ALLOYING OF POLYSILICON GATE ELECTRODES OF THE MIS STRUCTURES

A technique for forming CMIS structures has been devised, in which both types of field-effect transistors contain polysilicon gate electrodes doped with p⁺-doping. The pre-threshold and flow characteristics of fieldeffect transistors with a hidden n-channel and a gate made of p⁺-polysilicon were investigated, as well as the dependence of the drain current and dynamic conductivity on the channel length of field-effect transistors with a hidden n-channel. It is demonstrated that these devices have a lower threshold voltage as the thickness of the gate oxide is reduced from 17.5 to 11 nm, as well as an improvement in dynamic conductivity. It is demonstrated that the high values of effective electron mobility, saturation drain current, and dynamic mobility for field-effect transistors with a hidden n-channel and a gate made of p⁺-polysilicon are due to a decrease in electron scattering at the Si/SiO₂ interface, and a slight increase in the depth of the field peak in the structure of field-effect transistors reduces the rate of degradation under the influence of hot electrons injected through the Si/SiO₂ interface.

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