MEMORY AND SWITCHING PROCESSES IN THIN-FILM STRUCTURES BASED ON TWO- AND THREE-COMPONENT CHALCOGENIDES
https://doi.org/10.31143/2221-7789-2024-3-11-14
EDN: NEAYUV
Abstract
The proposed article presents a theoretical model for the analysis of memory and switching processes in thin-film structures based on two- and three-component chalcogenides, presents the results of an experimental study of the effect of introducing a modifying element isomorphic with one of the main components of a chalcogenide semiconductor in order to impurity substitution and change the electrophysical properties of the materials under study. The possibility of creating thin-film non-volatile memory elements based on them is ana- lyzed.
About the Authors
E F Troyan
Belarusian State University of Informatics and Radioelectronics, Minsk, Republic of Belarus
Russian Federation
Russian Federation
A G Smirnov
Belarusian State University of Informatics and Radioelectronics, Minsk, Republic of Belarus
Russian Federation
Russian Federation
A A Stepanov
Belarusian State University of Informatics and Radioelectronics, Minsk, Republic of Belarus
Russian Federation
Russian Federation
N V Zhovnerik
Belarusian State University of Informatics and Radioelectronics, Minsk, Republic of Belarus
Russian Federation
Russian Federation
Hiao Wei Sun
Южный университет науки и технологии, Шеньчжень, Китай
Russian Federation
Russian Federation
References
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Review
For citations:
Troyan E.F., Smirnov A.G., Stepanov A.A., Zhovnerik N.V., Sun H.W. MEMORY AND SWITCHING PROCESSES IN THIN-FILM STRUCTURES BASED ON TWO- AND THREE-COMPONENT CHALCOGENIDES. Proceedings of the Kabardino-Balkarian State University. 2024;14(3):11-14. (In Russ.) https://doi.org/10.31143/2221-7789-2024-3-11-14. EDN: NEAYUV
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