THE EFFECT OF CARRIER CAPTURE IN OXIDE ON THE CHARACTERISTICS OF MRI TRANSISTORS

Abstract

The paper investigates the effects in field-effect MRI transistors associated with the capture of charges by traps located both in the subcutaneous oxide layer and at the Si/SiO₂ interface. It is shown that the appearance of a positive charge is caused by the capture of holes by traps located near the boundary of the valence band of the anode, and at high stress doses, electron capture begins to play a predominant role. In the case of nega- tive gate voltages, the positive charge in the oxide is located near the Si/SiO₂ interface (~1 nm), that is, within the limits of electron tunneling. The current through a thin oxide, resulting from the Fowler-Nordheim effect, leads to the accumulation of charges in the oxide layer, as well as to the formation of traps at the Si/SiO₂ interface.