PROPERTIES OF TITANIUM SILICIDE FILMS OBTAINED BY CHEMICAL GAS-PHASE PLASMA-ACTIVATED DEPOSITION
https://doi.org/10.31143/2221-7789-2023-4-72-75
EDN: JMLIHB
Abstract
The characteristics of titanium silicide films formed using chemical gas-phase plasma-activated deposition (CGPD) have been investigated. The Si/Ti ratio in titanium silicide films is explored in relation to the SiH4/Sicl4 ratio, as well as the resistivity of the titanium silicide layer generated by different ways in relation to the annealing temperature in the argon Ag medium. It is demonstrated that the resistivity of titanium silicide layers obtained by the HGPO method is lowest at lower annealing temperatures, which is due to the low impurity content of the films, and that with accelerated annealing in the temperature range 600–950 °С, the Si/Ti ratio equals 2. It is shown that on the surface of titanium silicide films there can be SiO2 was grown in H2O vapors at 800 °C or in dry O2 at 900–950 °С.
About the Authors
N. V. Cherkesova
Kabardino-Balkarian State University named after Kh.M. Berbekov
Russian Federation
Russian Federation
G. A. Mustafaev
Kabardino-Balkarian State University named after Kh.M. Berbekov
Russian Federation
Russian Federation
A. G. Mustafaev
Dagestan State University of National Economy
Russian Federation
Russian Federation
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For citations:
Cherkesova N.V., Mustafaev G.A., Mustafaev A.G. PROPERTIES OF TITANIUM SILICIDE FILMS OBTAINED BY CHEMICAL GAS-PHASE PLASMA-ACTIVATED DEPOSITION. Proceedings of the Kabardino-Balkarian State University. 2023;13(4):72-75. (In Russ.) https://doi.org/10.31143/2221-7789-2023-4-72-75. EDN: JMLIHB
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