EFFECT OF ACCUMULATED GAMMA RADIATION DOSE ON «SILICON-ON-INSULATOR» STRUCTURES

Abstract

With varying levels of radiation dose, displacement on the substrate, and technological parameters, the characteristics of the outer layer, the static charge in the oxide, and the number of confined holes on both sides of the internal oxide layer were examined. Based on the amount of radiation absorbed, the voltage shift of transistors with a channel made by a latent oxide when exposed to X-rays was investigated. An assessment was made of the effect of X-ray radiation on the voltage shift for transistors with an oxide channel created by latent oxide during radiation, depending on the radiation dose. Additionally, an increase in radiation sensitivity is mirrored by a decrease in channel width. The study demonstrated that the protection from radiation of latent oxides significantly increases when a negative voltage is applied to the substrate during irradiation.