PHASE COMPOSITION, DISTRIBUTION OF COMPONENTS IN THE DIFFUSION ZONE OF CONTACT LAYERS IN THE PRESENCE OF ELECTRIC TRANSFER IN THE Bi – (Sn + 3 at % In) SYSTEM

The effect of impurities and electric transfer on phase formation and kinetics of the contact melting process in the Bi – (Sn + 3 at) system has been established by X-ray photoelectron spectroscopy. % In). No chemical compounds were found between Bi and In. The stages of the formation of the liquid phase during contact melting have been confirmed. It is shown that the decelerating direction of the current "stopped" the formation and growth of the contact area on the Bi side. An increase in the concentration of In (more than 2 times) in the near-contact region of pure Bi was found compared with the concentration contained in the contacted solid solution (Sn+3at% In), which is characteristic of the shockless and decelerating versions of the experiments.

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