PROPERTIES OF SILICON DIOXIDE FILMS FORMED USING SILANE AND CARBON DIOXIDE
https://doi.org/10.31143/2221-7789-2025-4-14-17
EDN: VEKWRT
Abstract
A study was conducted on the dependence of the growth rate, etching rate, breakdown voltage, and density of silicon dioxide films on the percentage of silane SiH4 in the gas mixture for different temperature values. It was shown that with increasing deposition temperature and silane content in the gas mixture, the density of silicon dioxide films increases and their stoichiometry improves. The application of silane pyrolysis in the presence of carbon dioxide (as an oxidizer) allows the formation of silicon dioxide films on silicon sub- strates that are identical to thermally grown oxide.
Keywords
About the Authors
N. V. Cherkesova
Kabardino-Balkarian State University
Russian Federation
Russian Federation
G. A. Mustafayev
Kabardino-Balkarian State University
Russian Federation
Russian Federation
A. G. Mustafayev
Kabardino-Balkarian State University
Russian Federation
Russian Federation
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Review
For citations:
Cherkesova N.V., Mustafayev G.A., Mustafayev A.G. PROPERTIES OF SILICON DIOXIDE FILMS FORMED USING SILANE AND CARBON DIOXIDE. Proceedings of the Kabardino-Balkarian State University. 2025;15(4):14-17. (In Russ.) https://doi.org/10.31143/2221-7789-2025-4-14-17. EDN: VEKWRT
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