THE INFLUENCE OF CHARGE MOVEMENT WITHIN AN OXIDE ON THE DEGRADATION OF CHARACTERISTICS IN METAL-DIELECTRIC-SEMICONDUCTOR STRUCTURES

Abstract

The effect of slow hole motion on the deterioration of an n-channel MDP PT with an n+ -polysilicon gate was investigated. The influence of trapped electron release on the dynamic degradation of p-channel MDP PT following hot carrier injection into the channel is examined. It is demonstrated that the field in the oxide influences the process of restoring features, and the time dependency has a distinct non-exponential character. It is demonstrated that the injection of electrons at high voltage at the gate during the process of alternating static effects causes trapped hole recombination, and that taking into account the effects of releasing the trapped charge allows the problems of relaxation of degradation processes to be solved.